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Metalorganic InP and Inx Ga1-x, Asy P1-y, on InP epitaxy at atmospheric pressure

Identifieur interne : 000715 ( Main/Exploration ); précédent : 000714; suivant : 000716

Metalorganic InP and Inx Ga1-x, Asy P1-y, on InP epitaxy at atmospheric pressure

Auteurs : RBID : ISTEX:11664_1984_Article_BF02656656.pdf

English descriptors

KwdEn :
- Epitaxy, Indium phosphide, Inx Ga1-x Asy P1-y, MOVPE, Metakirganic vapor phase epitaxy, Quaternary alloys.

Abstract

We present a procedure for the MOVPE of InP as simple as the one currently used for GaAs. InP and InGaAsP alloys are grown on InP substrates using trimethy1indium (TMI), phosphine, trimethylgallium (TMG) and arsine. The choice of carrier gas is important ; a mixture of hydrogen and nitrogen allowed us to grow uniform layers over large areas at atmospheric pressure, without pyrolizing the phosphine or separating the input reactants. Preliminary characterization results are presented.

DOI: 10.1007/BF02656656

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Le document en format XML

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<author><name>A. Mircea</name>
<affiliation wicri:level="3"><mods:affiliation>Centre National d'Etudes des Télécommunications, Laboratoire de BAGNEUX, 196 rue de Paris, 92220, Bagneux, France</mods:affiliation>
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<placeName><region type="region" nuts="2">Île-de-France</region>
<settlement type="city">Bagneux</settlement>
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<author><name>R. Azoulay</name>
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<author><name>L. Dugrand</name>
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<author><name>M. Sacilotti</name>
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<front><div type="abstract" xml:lang="eng">We present a procedure for the MOVPE of InP as simple as the one currently used for GaAs. InP and InGaAsP alloys are grown on InP substrates using trimethy1indium (TMI), phosphine, trimethylgallium (TMG) and arsine. The choice of carrier gas is important ; a mixture of hydrogen and nitrogen allowed us to grow uniform layers over large areas at atmospheric pressure, without pyrolizing the phosphine or separating the input reactants. Preliminary characterization results are presented.</div>
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<abstract lang="eng">We present a procedure for the MOVPE of InP as simple as the one currently used for GaAs. InP and InGaAsP alloys are grown on InP substrates using trimethy1indium (TMI), phosphine, trimethylgallium (TMG) and arsine. The choice of carrier gas is important ; a mixture of hydrogen and nitrogen allowed us to grow uniform layers over large areas at atmospheric pressure, without pyrolizing the phosphine or separating the input reactants. Preliminary characterization results are presented.</abstract>
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<topic>epitaxy</topic>
<topic>indium phosphide</topic>
<topic>quaternary alloys</topic>
<topic>Inx Ga1-x Asy P1-y</topic>
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Metalorganic InP and Inx Ga1-x, Asy P1-y, on InP epitaxy at atmospheric pressure

Metalorganic InP and Inx Ga1-x, Asy P1-y, on InP epitaxy at atmospheric pressure

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

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